Invention Grant
US08895347B2 Method for fabricating semiconductor layer having textured surface and method for fabricating solar cell
有权
具有纹理表面的半导体层的制造方法和太阳能电池的制造方法
- Patent Title: Method for fabricating semiconductor layer having textured surface and method for fabricating solar cell
- Patent Title (中): 具有纹理表面的半导体层的制造方法和太阳能电池的制造方法
-
Application No.: US13869764Application Date: 2013-04-24
-
Publication No.: US08895347B2Publication Date: 2014-11-25
- Inventor: Teng-Yu Wang , Chien-Hsun Chen , Chen-Hsun Du , Chung-Yuan Kung
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW101105045A 20120216; TW102101040A 20130111
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/30 ; H01L31/18 ; H01L21/20 ; H01L31/0236 ; H01L31/068

Abstract:
The disclosure provides a method for fabricating a semiconductor layer having a textured surface, including: (a) providing a textured substrate; (b) forming at least one semiconductor layer on the textured substrate; (c) forming a metal layer on the semiconductor layer; and (d) conducting a thermal process or a low temperature process to the textured substrate, the semiconductor layer and the metal layer, wherein the semiconductor layer is separated from the textured substrate by the thermal process to obtain the semiconductor layer having the metal layer and a textured surface.
Public/Granted literature
- US20130237005A1 METHOD FOR FABRICATING SEMICONDUCTOR LAYER HAVING TEXTURED SURFACE AND METHOD FOR FABRICATING SOLAR CELL Public/Granted day:2013-09-12
Information query
IPC分类: