发明授权
- 专利标题： Method to improve nucleation of materials on graphene and carbon nanotubes
- 专利标题（中）： 改善石墨烯和碳纳米管材料成核的方法
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申请号： US12476676申请日： 2009-06-02
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公开(公告)号： US08895352B2公开(公告)日： 2014-11-25
- 发明人: Katherina Babich , Alessandro Callegari , Zhihong Chen , Edward Kiewra , Yanning Sun
- 申请人： Katherina Babich , Alessandro Callegari , Zhihong Chen , Edward Kiewra , Yanning Sun
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Vazken Alexanian; Michael J. Chang, LLC
- 主分类号： H01L51/40
- IPC分类号： H01L51/40 ; H01L21/02 ; H01L29/66 ; H01L29/786
摘要：
Techniques for forming a thin coating of a material on a carbon-based material are provided. In one aspect, a method for forming a thin coating on a surface of a carbon-based material is provided. The method includes the following steps. An ultra thin silicon nucleation layer is deposited to a thickness of from about two angstroms to about 10 angstroms on at least a portion of the surface of the carbon-based material to facilitate nucleation of the coating on the surface of the carbon-based material. The thin coating is deposited to a thickness of from about two angstroms to about 100 angstroms over the ultra thin silicon layer to form the thin coating on the surface of the carbon-based material.