Invention Grant
- Patent Title: Integrated circuit and manufacturing method
- Patent Title (中): 集成电路及制造方法
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Application No.: US13745918Application Date: 2013-01-21
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Publication No.: US08896073B2Publication Date: 2014-11-25
- Inventor: Youri Victorovitch Ponomarev , David Tio Castro , Roel Daamen
- Applicant: NXP B.V.
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP12153390 20120131
- Main IPC: H01L27/14
- IPC: H01L27/14 ; G01N27/22 ; H01L51/42 ; H01L51/00 ; G01N27/12

Abstract:
Disclosed is an integrated circuit comprising a substrate including at least one light sensor; an interconnect structure over the substrate; at least one passivation layer over the interconnect structure, said passivation layer including a first area over the at least one light sensor; and a gas sensor such as a moisture sensor at least partially on a further area of the at least one passivation layer, wherein the gas sensor comprises a gas sensitive layer in between a first electrode and a second electrode, the gas sensitive layer further comprising a portion over the first area. A method of manufacturing such an IC is also disclosed.
Public/Granted literature
- US20130193417A1 Integrated Circuit and Manufacturing Method Public/Granted day:2013-08-01
Information query
IPC分类: