发明授权
- 专利标题: Piezoelectric film and method for manufacturing the same, piezoelectric film element and method for manufacturing the same, and piezoelectric film device
- 专利标题(中): 压电薄膜及其制造方法,压电薄膜元件及其制造方法以及压电薄膜器件
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申请号: US13532081申请日: 2012-06-25
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公开(公告)号: US08896187B2公开(公告)日: 2014-11-25
- 发明人: Kazufumi Suenaga , Kenji Shibata , Kazutoshi Watanabe , Akira Nomoto , Fumimasa Horikiri
- 申请人: Kazufumi Suenaga , Kenji Shibata , Kazutoshi Watanabe , Akira Nomoto , Fumimasa Horikiri
- 申请人地址: JP Tokyo
- 专利权人: Hitachi Metals, Ltd.
- 当前专利权人: Hitachi Metals, Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Fleit Gibbons Gutman Bongini & Bianco PL
- 代理商 Martin Fleit; Paul D. Bianco
- 优先权: JP2011-156212 20110715
- 主分类号: H01L41/083
- IPC分类号: H01L41/083 ; H01L41/08 ; H01L41/187 ; H01L41/316
摘要:
There is provided a piezoelectric film having an alkali niobate-based perovskite structure expressed by a general formula (NaxKyLiz)NbO3(0≦x≦1, 0≦y≦1, 0≦z≦0.2, x+y+z=1), wherein the alkali niobate has a crystal structure of a pseudo-cubic crystal, a tetragonal crystal, an orthorhombic crystal, a monoclinic crystal, a rhombohedral crystal, or has a crystal structure of coexistence of them, and when total of K—O bonding and K-Metal bonding is set as 100% in a binding state around K-atom of the alkali niobate, a K—O bonding ratio is 46.5% or more and a K-Metal bonding ratio is 53.5% or less, wherein the Metal indicates a metal atom included in the piezoelectric film.