Invention Grant
US08897055B2 Memory device, method of operating the same, and electronic device having the memory device
有权
存储装置，其操作方法和具有存储装置的电子装置
- Patent Title: Memory device, method of operating the same, and electronic device having the memory device
- Patent Title (中): 存储装置，其操作方法和具有存储装置的电子装置
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Application No.: US13771633Application Date: 2013-02-20
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Publication No.: US08897055B2Publication Date: 2014-11-25
- Inventor: Je-Min Ryu , Gil-Su Kim , Jong-Min Oh , Sung-Min Seo , Ho-Young Song , Yong-Ho Cho
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Consulting, PLLC
- Priority: KR10-2012-0058374 20120531
- Main IPC: G11C17/16
- IPC: G11C17/16 ; G11C29/00 ; G11C7/10 ; G11C17/18
Abstract:
A memory device includes a memory cell array and a fuse device. The fuse device includes a fuse cell array and a fuse control circuit. The fuse cell array includes a first fuse cell sub-array which stores first data associated with operation of the fuse control circuit, and a second fuse cell sub-array which stores second data associated with operation of the memory device. The fuse control circuit is electrically coupled to the first and second fuse cell sub-arrays, and is configured to read the first and second data from the first and second fuse cell sub-arrays, respectively.
Public/Granted literature
- US20130322149A1 MEMORY DEVICE, METHOD OF OPERATING THE SAME, AND ELECTRONIC DEVICE HAVING THE MEMORY DEVICE Public/Granted day:2013-12-05
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