发明授权
US08897085B2 Immunity against temporary and short power drops in non-volatile memory: pausing techniques
有权
在非易失性存储器中暂时和短暂掉电的抗扰度:暂停技术
- 专利标题: Immunity against temporary and short power drops in non-volatile memory: pausing techniques
- 专利标题(中): 在非易失性存储器中暂时和短暂掉电的抗扰度:暂停技术
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申请号: US13803882申请日: 2013-03-14
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公开(公告)号: US08897085B2公开(公告)日: 2014-11-25
- 发明人: Yan Li
- 申请人: SanDisk Technologies Inc.
- 申请人地址: US TX Plano
- 专利权人: SanDisk Technologies Inc.
- 当前专利权人: SanDisk Technologies Inc.
- 当前专利权人地址: US TX Plano
- 代理机构: Davis Wright Tremaine LLP
- 主分类号: G11C7/00
- IPC分类号: G11C7/00 ; G11C16/32 ; G11C5/14 ; G11C16/30 ; G11C7/22 ; G11C16/04 ; G11C11/56
摘要:
A mechanism is presented memory circuits, such a NAND-type flash memories, to autonomously protect themselves from temporary and short power drops. A detection mechanism looks for the supply voltage to drop below a function voltage for a period of time. When such an event occurs, a suspend mechanism is activated, and after completing the last micro-operation (such as a program pulse) the memory freezes. When power is again stable at an operational level, the suspended operation is resumed. The memory controller can then be notified upon occurrence of such voltage drop by polling a special status bit. Examples of how the pausing can be implemented include altering of clock signals and suspending sub-phases of larger operations.
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