发明授权
- 专利标题: Etch failure prediction based on wafer resist top loss
- 专利标题(中): 基于晶圆抗蚀剂顶部损耗的蚀刻失效预测
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申请号: US13835339申请日: 2013-03-15
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公开(公告)号: US08898597B2公开(公告)日: 2014-11-25
- 发明人: Qing Yang , Shyue Fong Quek , Gek Soon Chua , Yee Mei Foong , Dong Qing Zhang , Yun Tang
- 申请人: Qing Yang , Shyue Fong Quek , Gek Soon Chua , Yee Mei Foong , Dong Qing Zhang , Yun Tang
- 申请人地址: SG Singapore
- 专利权人: GLOBALFOUNDRIES Singapore Pte. Ltd.
- 当前专利权人: GLOBALFOUNDRIES Singapore Pte. Ltd.
- 当前专利权人地址: SG Singapore
- 代理机构: Ditthavong & Steiner, P.C.
- 主分类号: G06F17/50
- IPC分类号: G06F17/50
摘要:
An approach for methodology, and an associated apparatus, enabling a simulation process to check integrity of the design and predict a manufacturability of a resulting circuit that accounts for process latitude without a long turnaround time and/or a highly skilled engineer is disclosed. Embodiments include: determining first and second features of an IC design; determining a thickness of a resist layer of the IC design based on an aerial image of the IC design; determining a threshold value according to the thickness; and comparing the threshold value to a separation distance between the first and second features.
公开/授权文献
- US20140282286A1 ETCH FAILURE PREDICTION BASED ON WAFER RESIST TOP LOSS 公开/授权日:2014-09-18
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