发明授权
US08900978B1 Methods for making a semiconductor device with shaped source and drain recesses and related devices
有权
制造具有成形源极和漏极凹槽的半导体器件和相关器件的方法
- 专利标题： Methods for making a semiconductor device with shaped source and drain recesses and related devices
- 专利标题（中）： 制造具有成形源极和漏极凹槽的半导体器件和相关器件的方法
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申请号： US13905534申请日： 2013-05-30
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公开(公告)号： US08900978B1公开(公告)日： 2014-12-02
- 发明人: Nicolas Loubet , Douglas LaTulipe , Alexander Reznicek
- 申请人： STMicroelectronics, Inc. , International Business Machines Corporation
- 申请人地址： US TX Coppell US NY Armonk
- 专利权人： STMicroelectronics, Inc.,International Business Machines Corporation
- 当前专利权人： STMicroelectronics, Inc.,International Business Machines Corporation
- 当前专利权人地址： US TX Coppell US NY Armonk
- 代理机构： Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- 主分类号： H01L21/205
- IPC分类号： H01L21/205 ; H01L21/306 ; H01L21/336 ; H01L29/66 ; H01L29/78
摘要：
A method for making a semiconductor device includes forming at least one gate stack on a layer comprising a first semiconductor material and etching source and drain recesses adjacent the at least one gate stack. The method further includes shaping the source and drain recesses to have a vertical side extending upwardly from a bottom to an inclined extension adjacent the at least one gate stack.
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