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US08901568B2 Silicon carbide insulating gate type semiconductor device and fabrication method thereof 有权
碳化硅绝缘栅型半导体器件及其制造方法

Silicon carbide insulating gate type semiconductor device and fabrication method thereof
摘要：
A termination configuration of a silicon carbide insulating gate type semiconductor device includes a semiconductor layer of a first conductivity type having a first main face, a gate electrode, and a source interconnection, as well as a circumferential resurf region. The semiconductor layer includes a body region of a second conductivity type, a source region of the first conductivity type, a contact region of the second conductivity type, and a circumferential resurf region of the second conductivity type. A width of a portion of the circumferential resurf region excluding the body region is greater than or equal to ½ the thickness of at least the semiconductor layer. A silicon carbide insulating gate type semiconductor device of high breakdown voltage and high performance can be provided.
摘要（中）：

碳化硅绝缘栅型半导体器件的端接构造包括具有第一主面，栅电极和源极互连的第一导电类型的半导体层以及周向复原区域。 半导体层包括第二导电类型的主体区域，第一导电类型的源极区域，第二导电类型的接触区域和第二导电类型的周边复原区域。 除了身体区域之外的圆周清理区域的一部分的宽度大于或等于至少半导体层的厚度的1/2。 可以提供具有高击穿电压和高性能的碳化硅绝缘栅型半导体器件。

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