发明授权
- 专利标题： Tapered nanowire structure with reduced off current
- 专利标题（中）： 锥形纳米线结构具有减小的截止电流
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申请号： US13369375申请日： 2012-02-09
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公开(公告)号： US08901659B2公开(公告)日： 2014-12-02
- 发明人: Jeffrey W. Sleight , Sarunya Bangsaruntip
- 申请人： Jeffrey W. Sleight , Sarunya Bangsaruntip
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 H. Daniel Schnurmann
- 主分类号： H01L29/66
- IPC分类号： H01L29/66
摘要：
Non-planar semiconductor devices including at least one semiconductor nanowire having a tapered profile which widens from the source side of the device towards the drain side of the device are provided which have reduced gate to drain coupling and therefore reduced gate induced drain tunneling currents.
公开/授权文献
- US20130207079A1 Tapered Nanowire Structure With Reduced Off Current 公开/授权日：2013-08-15
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