发明授权
US08901673B2 Semiconductor device having ring-shaped gate electrode, design apparatus, and program
有权
具有环形栅电极的半导体器件，设计装置和程序
- 专利标题： Semiconductor device having ring-shaped gate electrode, design apparatus, and program
- 专利标题（中）： 具有环形栅电极的半导体器件，设计装置和程序
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申请号： US14029428申请日： 2013-09-17
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公开(公告)号： US08901673B2公开(公告)日： 2014-12-02
- 发明人: Takamitsu Onda
- 申请人： PS4 Luxco S.a.r.l.
- 申请人地址： LU Luxembourg
- 专利权人： PS4 Luxco S.a.r.l.
- 当前专利权人： PS4 Luxco S.a.r.l.
- 当前专利权人地址： LU Luxembourg
- 优先权： JP2010-033740 20100218
- 主分类号： H01L27/088
- IPC分类号： H01L27/088 ; H01L29/78 ; H01L29/423 ; H01L27/02 ; H01L27/105 ; H01L27/108 ; H03K5/24
摘要：
A semiconductor device includes: a substrate; a transistor that has a ring-shaped gate electrode formed on the substrate; a plurality of external dummy electrodes that are arranged outside the gate electrode and are formed in the same layer as the gate electrode; and at least one internal dummy electrode that is arranged inside the gate electrode and is formed in the same layer as the gate electrode.
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