发明授权
- 专利标题： Strength of micro-bump joints
- 专利标题（中）： 微凸点接头的强度
-
申请号： US12789696申请日： 2010-05-28
-
公开(公告)号： US08901736B2公开(公告)日： 2014-12-02
- 发明人: Wen-Wei Shen , Chen-Shien Chen , Chen-Cheng Kuo , Ming-Fa Chen , Rung-De Wang
- 申请人： Wen-Wei Shen , Chen-Shien Chen , Chen-Cheng Kuo , Ming-Fa Chen , Rung-De Wang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, LLP
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/31 ; H01L25/065
摘要：
A device includes a work piece including a metal bump; and a dielectric layer having a portion directly over the metal bump. The metal bump and a surface of the portion of the dielectric layer form an interface. A metal finish is formed over and contacting the metal bump. The metal finish extends from over the dielectric layer to below the interface.
公开/授权文献
- US20110291262A1 Strength of Micro-Bump Joints 公开/授权日：2011-12-01
信息查询
IPC分类:
