Invention Grant
- Patent Title: Device having a multilayered structure and method of fabricating thereof
- Patent Title (中): 具有多层结构的装置及其制造方法
-
Application No.: US12677088Application Date: 2008-02-20
-
Publication No.: US08906707B2Publication Date: 2014-12-09
- Inventor: Young Joo Lee , Hyunjung Kim
- Applicant: Young Joo Lee , Hyunjung Kim
- Applicant Address: KR Seoul
- Assignee: Industry-University Cooperation Foundation Sogang University
- Current Assignee: Industry-University Cooperation Foundation Sogang University
- Current Assignee Address: KR Seoul
- Priority: KR10-2007-0091223 20070907
- International Application: PCT/KR2008/000984 WO 20080220
- International Announcement: WO2009/031736 WO 20090312
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/00 ; H01L51/52 ; H01L51/50
Abstract:
The invention provides a multilayered device and the method for fabricating the same. The multilayered device comprises a substrate, a first layer deposited on the substrate, a second layer deposited on the first layer, and a third layer deposited on the second layer. The coverage of the second layer is determined by a rate of crystallization of the third layer. The rate of crystallization of the third layer is determined by measuring X-ray diffraction of the device.
Public/Granted literature
- US20110012163A1 DEVICE HAVING A MULTILAYERED STRUCTURE AND METHOD OF FABRICATING THEREOF Public/Granted day:2011-01-20
Information query
IPC分类:
