Invention Grant
- Patent Title: Method of manufacturing light emitting device
- Patent Title (中): 制造发光器件的方法
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Application No.: US13744995Application Date: 2013-01-18
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Publication No.: US08906714B2Publication Date: 2014-12-09
- Inventor: Shunpei Yamazaki , Takashi Hamada , Satoshi Seo
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2002-179078 20020619; JP2002-189409 20020628
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L33/00 ; H01L51/00 ; H01L27/32 ; H01L51/56

Abstract:
A method of manufacturing a light emitting device is provided which requires low cost, is easy, and has high throughput. The method of manufacturing a light emitting device is characterized in that: a solution containing a light emitting material is ejected to an anode or cathode under reduced pressure; a solvent in the solution is volatilized until the solution reaches the anode or cathode; and the remaining light emitting material is deposited on the anode or cathode to form a light emitting layer. A burning step for reduction in film thickness is not required after the solution application. Therefore, the manufacturing method, which requires low cost and is easy but which has high throughput, can be provided.
Public/Granted literature
- US20130157392A1 Method of Manufacturing Light Emitting Device Public/Granted day:2013-06-20
Information query
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