Invention Grant
US08906728B2 Method for manufacturing a photodetector having a bandwidth tuned honeycomb cell photodiode structure 有权
具有带宽调谐蜂窝单元光电二极管结构的光电检测器的制造方法

Method for manufacturing a photodetector having a bandwidth tuned honeycomb cell photodiode structure
Abstract:
A photodetector with a bandwidth-tuned cell structure is provided. The photodetector is fabricated from a semiconductor substrate that is heavily doped with a first dopant. A plurality of adjoining cavities is formed in the semiconductor substrate having shared cell walls. A semiconductor well is formed in each cavity, moderately doped with a second dopant opposite in polarity to the first dopant. A layer of oxide is grown overlying the semiconductor wells and an annealing process is performed. Then, metal pillars are formed that extend into each semiconductor well having a central axis aligned with an optical path. A first electrode is connected to the metal pillar of each cell, and a second electrode connected to the semiconductor substrate. The capacitance between the first and second electrodes decreases in response to forming an increased number of semiconductor wells with a reduced diameter, and forming metal pillars with a reduced diameter.
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