Invention Grant
- Patent Title: Semiconductor structure that reduces the effects of gate cross diffusion and method of forming the structure
- Patent Title (中): 降低栅极交叉扩散效应的半导体结构和形成结构的方法
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Application No.: US14059503Application Date: 2013-10-22
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Publication No.: US08906770B2Publication Date: 2014-12-09
- Inventor: Manoj Mehrotra
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Frederick J. Telecky Jr.
- Main IPC: H01L21/266
- IPC: H01L21/266 ; H01L29/66 ; H01L21/8238 ; H01L21/761 ; H01L21/762 ; H01L29/78 ; H01L21/265
Abstract:
Gate cross diffusion in a semiconductor structure is substantially reduced or eliminated by forming multiple n-type gate regions with different dopant concentrations and multiple p-type gate regions with different dopant concentrations so that the n-type gate region with the lowest dopant concentration touches the p-type gate region with the lowest dopant concentration.
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