发明授权
- 专利标题: Silicon based nanoscale crossbar memory
- 专利标题(中): 硅基纳米尺度交叉记忆体
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申请号: US13291094申请日: 2011-11-07
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公开(公告)号: US08907317B2公开(公告)日: 2014-12-09
- 发明人: Wei Lu , Sung Hyun Jo , Kuk-Hwan Kim
- 申请人: Wei Lu , Sung Hyun Jo , Kuk-Hwan Kim
- 申请人地址: US MI Ann Arbor
- 专利权人: The Regents of The University of Michigan
- 当前专利权人: The Regents of The University of Michigan
- 当前专利权人地址: US MI Ann Arbor
- 代理机构: Reising Ethington P.C.
- 主分类号: H01L29/06
- IPC分类号: H01L29/06 ; H01L21/82 ; G11C13/00 ; H01L45/00 ; H01L27/24 ; G11C11/56 ; B82Y10/00
摘要:
The present application describes a crossbar memory array. The memory array includes a first array of parallel nanowires of a first material and a second array of parallel nanowires of a second material. The first and the second array are oriented at an angle with each other. The array further includes a plurality of nanostructures of non-crystalline silicon disposed between a nanowire of the first material and a nanowire of the second material at each intersection of the two arrays. The nanostructures form a resistive memory cell together with the nanowires of the first and second materials.
公开/授权文献
- US20120049149A1 SILICON BASED NANOSTRUCTURE CROSSBAR MEMORY 公开/授权日:2012-03-01