Invention Grant
- Patent Title: Semiconductor device with a gate electrode having a shape formed based on a slope and gate lower opening and method of manufacturing the same
- Patent Title (中): 具有基于斜面和栅极开口形成的形状的栅电极的半导体器件及其制造方法
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Application No.: US14027213Application Date: 2013-09-15
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Publication No.: US08907379B2Publication Date: 2014-12-09
- Inventor: Naoko Kurahashi , Kozo Makiyama
- Applicant: Fujitsu Limited
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Priority: JP2009-205756 20090907
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/423 ; H01L21/285 ; H01L29/778 ; H01L29/20
Abstract:
A semiconductor device has a semiconductor region including a gate electrode disposed over the semiconductor region, a first electrode portion, a second electrode portion standing substantially perpendicular to a surface of the semiconductor region and a substantially constant dimension in a direction parallel to the surface of the semiconductor region. The semiconductor device has a tapered portion disposed between the first electrode portion and the second electrode portion and has a dimension parallel to the surface of the semiconductor region increasing in the direction from the second electrode portion to the first electrode portion. Further, the semiconductor device includes a source and a drain electrode at both sides of the gate electrode over the semiconductor region and an insulating layer that covers a portion of the surface of the semiconductor region. Additionally, the second electrode portion may be positioned closer to one of the drain electrode and the source electrode.
Public/Granted literature
- US20140008701A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-01-09
Information query
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