发明授权
- 专利标题: Calibration method and inspection apparatus
- 专利标题(中): 校准方法和检验仪器
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申请号: US13181905申请日: 2011-07-13
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公开(公告)号: US08908148B2公开(公告)日: 2014-12-09
- 发明人: Hubertus Antonius Geraets , Gerardus Carolus Johannus Hofmans , Sven Gunnar Krister Magnusson
- 申请人: Hubertus Antonius Geraets , Gerardus Carolus Johannus Hofmans , Sven Gunnar Krister Magnusson
- 申请人地址: NL Veldhoven
- 专利权人: ASML Netherlands B.V.
- 当前专利权人: ASML Netherlands B.V.
- 当前专利权人地址: NL Veldhoven
- 代理机构: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- 主分类号: G03F7/20
- IPC分类号: G03F7/20 ; G01N21/93 ; G01N21/956
摘要:
A method of calibrating an inspection apparatus. Obtaining a surface level measurements (LS) at respective level sensing locations LS(x,y). Determining focus settings (LPA, LPB) for exposure field regions (EFA, EFB) in accordance with surface level measurements (LSA, LSB) having level sensing locations corresponding to the respective exposure field region. Exposing exposure field regions (EFA, EFB) with focus offsets (FO1, FO2) defined with reference to the respective focus settings (LPA, LPB) to produce target patterns at respective target locations. Obtaining focus-dependent property measurements, such as Critical Dimension (CD) and/or side wall angle (SWA) of the target patterns measured using the inspection apparatus; and calibrating the inspection apparatus using the focus-dependent property measurements (CD/SWA) and the respective focus offsets (FO1, FO2). The calibration uses surface level measurements (e.g., LSB(3)) having a level sensing location (e.g., LSLB(3)) corresponding to the respective target location (TLB). Each offset value is thus corrected in the calibration for the local wafer stack unflatness present during exposure.
公开/授权文献
- US20120013875A1 Calibration Method and Inspection Apparatus 公开/授权日:2012-01-19
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