发明授权
US08912584B2 PFET polysilicon layer with N-type end cap for electrical shunt
有权
PFET多晶硅层,带N型端盖,用于电气分流
- 专利标题: PFET polysilicon layer with N-type end cap for electrical shunt
- 专利标题(中): PFET多晶硅层,带N型端盖,用于电气分流
-
申请号: US13658049申请日: 2012-10-23
-
公开(公告)号: US08912584B2公开(公告)日: 2014-12-16
- 发明人: Date Jan Willem Noorlag
- 申请人: Apple Inc.
- 申请人地址: US CA Cupertino
- 专利权人: Apple Inc.
- 当前专利权人: Apple Inc.
- 当前专利权人地址: US CA Cupertino
- 代理机构: Meyertons, Hood, Kivlin, Kowert & Goetzel, P.C.
- 代理商 Gareth M. Sampson
- 主分类号: H01L27/146
- IPC分类号: H01L27/146
摘要:
A semiconductor device includes a PFET transistor (a PMOS FET) having a poly(silicon) layer with a p-type doped portion and an n-type doped portion. The p-type doped portion is located above a channel region of the transistor and the n-type doped portion is located in an end portion of the poly layer outside the channel region. The poly layer may be formed by doping portions of an amorphous silicon layer with either the p-type dopant or the n-type dopant and then annealing the amorphous silicon layer to diffuse the dopants and crystallize the amorphous silicon to form polysilicon. The n-type doped portion of the poly layer may provide an electrical shunt in the end portion of the poly layer to reduce any effects of insufficient diffusion of the p-type dopant in the poly layer.