发明授权
- 专利标题： FinFETs and methods for forming the same
- 专利标题（中）： FinFET及其形成方法
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申请号： US12758426申请日： 2010-04-12
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公开(公告)号： US08912602B2公开(公告)日： 2014-12-16
- 发明人: Yu-Rung Hsu , Chen-Hua Yu , Chen-Nan Yeh
- 申请人： Yu-Rung Hsu , Chen-Hua Yu , Chen-Nan Yeh
- 申请人地址： TW
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW
- 代理机构： Lowe Hauptman & Ham, LLP
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L29/78 ; H01L29/66
摘要：
A Fin field effect transistor includes a fin disposed over a substrate. A gate is disposed over a channel portion of the fin. A source region is disposed at a first end of the fin. A drain region is disposed at a second end of the fin. The source region and the drain region are spaced from the substrate by at least one air gap.
公开/授权文献
- US20100258870A1 FINFETS AND METHODS FOR FORMING THE SAME 公开/授权日：2010-10-14
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