Invention Grant
- Patent Title: Semiconductor device with hollow structure
- Patent Title (中): 具有中空结构的半导体器件
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Application No.: US13102452Application Date: 2011-05-06
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Publication No.: US08912638B2Publication Date: 2014-12-16
- Inventor: Horst Theuss , Gottfried Beer
- Applicant: Horst Theuss , Gottfried Beer
- Applicant Address: DE Munich
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Munich
- Agency: Brinks Gilson & Lione
- Priority: DE102006058010 20061208
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/00 ; H01L23/31 ; H01L21/56 ; B81B7/00
Abstract:
A device comprising a chip, which is held in casting compound and on which a hollow structure is arranged is disclosed.
Public/Granted literature
- US20110210450A1 SEMICONDUCTOR DEVICE WITH HOLLOW STRUCTURE Public/Granted day:2011-09-01
Information query
IPC分类:
