发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US13540565申请日： 2012-07-02
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公开(公告)号： US08912640B2公开(公告)日： 2014-12-16
- 发明人: Keita Takada , Tadatoshi Danno , Hirokazu Kato
- 申请人： Keita Takada , Tadatoshi Danno , Hirokazu Kato
- 申请人地址： JP Kawasaki-shi
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kawasaki-shi
- 代理机构： Miles & Stockbridge P.C.
- 优先权： JP2011-148139 20110704
- 主分类号： H01L33/44
- IPC分类号： H01L33/44 ; H01L23/00 ; H01L23/495 ; H01L23/31
摘要：
A semiconductor device is inhibited from being degraded in reliability. The semiconductor device has a tab including a top surface, a bottom surface, and a plurality of side surfaces. Each of the side surfaces of the tab has a first portion continued to the bottom surface of the tab, a second portion located outwardly of the first portion and continued to the top surface of the tab, and a third portion located outwardly of the second portion and continued to the top surface of the tab to face the same direction as each of the first and second portions. In planar view, the outer edge of the semiconductor chip is located between the third portion and the second portion of the tab, and the outer edge of an adhesive material fixing the semiconductor chip to the tab is located between the semiconductor chip and the second portion.
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