发明授权
- 专利标题: Interconnect structure with enhanced reliability
- 专利标题(中): 互连结构,增强可靠性
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申请号: US12915510申请日: 2010-10-29
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公开(公告)号: US08912658B2公开(公告)日: 2014-12-16
- 发明人: Ronald Filippi , Ping-Chuan Wang , Griselda Bonilla , Kaushik Chanda , Robert D. Edwards , Andrew H. Simon
- 申请人: Ronald Filippi , Ping-Chuan Wang , Griselda Bonilla , Kaushik Chanda , Robert D. Edwards , Andrew H. Simon
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理商 Steven Kellner; Catherine Ikers
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/532 ; H01L21/768
摘要:
An improved interconnect structure including a dielectric layer having a conductive feature embedded therein, the conductive feature having a first top surface that is substantially coplanar with a second top surface of the dielectric layer; a metal cap layer located directly on the first top surface, wherein the metal cap layer does not substantially extend onto the second top surface; a first dielectric cap layer located directly on the second top surface, wherein the first dielectric cap layer does not substantially extend onto the first top surface and the first dielectric cap layer is thicker than the metal cap layer; and a second dielectric cap layer on the metal cap layer and the first dielectric cap layer. A method of forming the interconnect structure is also provided.
公开/授权文献
- US20120104610A1 INTERCONNECT STRUCTURE WITH ENHANCED RELIABILITY 公开/授权日:2012-05-03