Invention Grant
- Patent Title: Semiconductor structure and method for reducing noise therein
- Patent Title (中): 用于降低噪声的半导体结构和方法
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Application No.: US13647392Application Date: 2012-10-09
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Publication No.: US08912844B2Publication Date: 2014-12-16
- Inventor: Tzung-Lin Li , Chun-Chang Wu , Chih-Yu Tseng
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H03K5/00
- IPC: H03K5/00
Abstract:
The present invention provides a semiconductor structure, including a substrate, a first TSV, an inductor and a capacitor. The first TSV is disposed in the substrate and has a first signal. The inductor is disposed in the substrate. The capacitor is electrically connected to the inductor to form an LC circuit to bypass the noise from the first signal. The present invention further provides a method of reducing the signal noise in a semiconductor structure.
Public/Granted literature
- US20140097890A1 Semiconductor Structure and Method for Reducing Noise Therein Public/Granted day:2014-04-10
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