发明授权
- 专利标题： Magnetoresistance effect element, magnetic head, magnetic head assembly, and magnetic recording and reproducing device
- 专利标题（中）： 磁阻效应元件，磁头，磁头组件和磁记录和再现装置
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申请号： US14182540申请日： 2014-02-18
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公开(公告)号： US08913351B2公开(公告)日： 2014-12-16
- 发明人: Susumu Hashimoto , Masayuki Takagishi , Shuichi Murakami , Yousuke Isowaki , Naoki Hase , Hitoshi Iwasaki
- 申请人： Kabushiki Kaisha Toshiba
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Nixon & Vanderhye, P.C.
- 优先权： JP2013-029203 20130218
- 主分类号： G11B5/39
- IPC分类号： G11B5/39
摘要：
According to one embodiment, a magnetoresistance effect element includes first and second shields, a stacked body and a hard bias unit. The stacked body includes first and second magnetic layers, an intermediate layer and a first Ru layer. A magnetization of the first magnetic layer is changeable. A magnetization of the second magnetic layer is changeable. The intermediate layer is nonmagnetic. The first Ru layer is provided between the first shield and the first magnetic layer. A thickness of the first Ru layer is not less than 1.5 nanometers and not more than 2.5 nanometers. The hard bias unit is provided between the first shield and the second shield. A first direction from the first shield toward the second shield intersects a second direction from the stacked body toward the hard bias unit.