发明授权
- 专利标题: ESD protection circuit
- 专利标题(中): ESD保护电路
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申请号: US13485932申请日: 2012-06-01
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公开(公告)号: US08913357B2公开(公告)日: 2014-12-16
- 发明人: Da-Wei Lai , Mahadeva Iyer Natarajan
- 申请人: Da-Wei Lai , Mahadeva Iyer Natarajan
- 申请人地址: SG Singapore
- 专利权人: GLOBALFOUNDRIES Singapore Pte. Ltd.
- 当前专利权人: GLOBALFOUNDRIES Singapore Pte. Ltd.
- 当前专利权人地址: SG Singapore
- 代理机构: Horizon IP Pte. Ltd.
- 主分类号: H02H9/04
- IPC分类号: H02H9/04
摘要:
An ESD circuit is disclosed. The ESD circuit includes a pad and a ground and a sensing element coupled between the pad and ground for sensing an ESD current. The sensing element generates an active sense output signal when an ESD current is sensed and an inactive sense output signal when no ESD current is sensed. The ESD circuit also includes a bypass element comprising a bi-polar junction transistor. The bypass element is coupled in parallel to the sensing element between the pad and ground. The active sense output signal causes the bypass element to be activated to provide a current path between the pad and ground.
公开/授权文献
- US20130321963A1 ESD PROTECTION CIRCUIT 公开/授权日:2013-12-05
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