发明授权
US08913897B2 Laser diode, method for manufacturing laser diode and passive optical network system
有权
激光二极管,激光二极管制造方法及无源光网络系统
- 专利标题: Laser diode, method for manufacturing laser diode and passive optical network system
- 专利标题(中): 激光二极管,激光二极管制造方法及无源光网络系统
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申请号: US13482755申请日: 2012-05-29
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公开(公告)号: US08913897B2公开(公告)日: 2014-12-16
- 发明人: Xiaoping Zhou , Xuejin Yan
- 申请人: Xiaoping Zhou , Xuejin Yan
- 申请人地址: CN Shenzhen
- 专利权人: Huawei Technologies Co., Ltd.
- 当前专利权人: Huawei Technologies Co., Ltd.
- 当前专利权人地址: CN Shenzhen
- 代理机构: Leydig, Voit & Mayer, Ltd.
- 优先权: CN201110110646 20110429
- 主分类号: H04B10/00
- IPC分类号: H04B10/00 ; H01S5/10 ; H01S5/0625 ; H01S5/34 ; H04J14/02
摘要:
Embodiments of the present disclosure provide a laser diode. The laser diode includes: a semiconductor substrate, a waveguide layer and a light wave limiting layer. The waveguide layer is disposed on the semiconductor substrate, and comprises a quantum well layer. The light wave limiting layer is disposed on a surface of the waveguide layer, and is configured to limit a light wave to be transmitted in the waveguide layer. The quantum well layer includes a plurality of quantum well regions that are disposed along a transmission direction of the light wave, and the quantum well regions respectively have gain peaks of different wavelengths. The embodiments of the present disclosure further provide a manufacturing method of a laser diode and a passive optical network system using the laser diode.
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