发明授权
US08921144B2 Planar cavity MEMS and related structures, methods of manufacture and design structures
有权
平面腔MEMS及相关结构,制造方法和设计结构
- 专利标题: Planar cavity MEMS and related structures, methods of manufacture and design structures
- 专利标题(中): 平面腔MEMS及相关结构,制造方法和设计结构
-
申请号: US12973333申请日: 2010-12-20
-
公开(公告)号: US08921144B2公开(公告)日: 2014-12-30
- 发明人: George A. Dunbar, III , Jeffrey C. Maling , William J. Murphy , Anthony K. Stamper
- 申请人: George A. Dunbar, III , Jeffrey C. Maling , William J. Murphy , Anthony K. Stamper
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Roberts Mlotkowski Safran & Cole, P.C.
- 代理商 Anthony Canale
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; G06F17/50 ; B81B3/00 ; B81C1/00 ; H01H57/00
摘要:
A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a lower sacrificial material used to form a lower cavity. The method further includes forming a cavity via connecting the lower cavity to an upper cavity. The cavity via is formed with a top view profile of rounded or chamfered edges. The method further includes forming an upper sacrificial material within and above the cavity via, which has a resultant surface based on the profile of the cavity via. The upper cavity is formed with a lid that is devoid of structures that would interfere with a MEMS beam, including: depositing a lid material on the resultant surface of the upper sacrificial material; and venting the upper sacrificial material to form the upper cavity such the lid material forms the lid which conforms with the resultant surface of the upper sacrificial material.