发明授权
- 专利标题： Method of fabricating an integrated circuit device
- 专利标题（中）： 制造集成电路器件的方法
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申请号： US13189108申请日： 2011-07-22
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公开(公告)号： US08921177B2公开(公告)日： 2014-12-30
- 发明人: Ming-Hsi Yeh , Hsien-Hsin Lin , Ying-Hsueh Chang Chien , Yi-Fang Pai , Chi-Ming Yang , Chin-Hsiang Lin
- 申请人： Ming-Hsi Yeh , Hsien-Hsin Lin , Ying-Hsueh Chang Chien , Yi-Fang Pai , Chi-Ming Yang , Chin-Hsiang Lin
- 申请人地址： TW
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW
- 代理机构： Lowe Hauptman & Ham, LLP
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L21/20
摘要：
A method for fabricating an integrated device is disclosed. A protective layer is formed over a gate structure when forming epitaxial (epi) features adjacent to another gate structure uncovered by the protective layer. The protective layer is thereafter removed after forming the epitaxial (epi) features. The disclosed method provides an improved method for removing the protective layer without substantial defects resulting. In an embodiment, the improved formation method is achieved by providing a protector over an oxide-base material, and then removing the protective layer using a chemical comprising hydrofluoric acid.
公开/授权文献
- US20130023094A1 METHOD OF FABRICATING AN INTEGRATED CIRCUIT DEVICE 公开/授权日：2013-01-24
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