Invention Grant
US08921188B2 Methods of forming a transistor device on a bulk substrate and the resulting device
有权
在体基板上形成晶体管器件的方法和所得到的器件
- Patent Title: Methods of forming a transistor device on a bulk substrate and the resulting device
- Patent Title (中): 在体基板上形成晶体管器件的方法和所得到的器件
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Application No.: US13761686Application Date: 2013-02-07
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Publication No.: US08921188B2Publication Date: 2014-12-30
- Inventor: Ram Asra
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/762 ; H01L21/8234 ; H01L21/8238
Abstract:
One illustrative method disclosed herein includes forming a trench within an isolated region of a bulk semiconductor substrate, forming a region of an insulating material in the trench and forming a semiconductor material within the trench and above the upper surface of the region of insulating material. A substrate disclosed herein includes an isolated substrate region in a bulk semiconductor substrate, a region of an insulating material that is positioned within a trench defined in the isolated substrate region and a semiconductor material positioned within the trench and above the upper surface of the region of insulating material.
Public/Granted literature
- US20140217544A1 METHODS OF FORMING A TRANSISTOR DEVICE ON A BULK SUBSTRATE AND THE RESULTING DEVICE Public/Granted day:2014-08-07
Information query
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