Invention Grant
- Patent Title: Method of making semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US14231659Application Date: 2014-03-31
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Publication No.: US08921888B2Publication Date: 2014-12-30
- Inventor: Yuan-Hsiang Chang , Sung-Bin Lin
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L21/266 ; H01L29/66 ; H01L29/73 ; H01L29/872 ; H01L21/8249 ; H01L27/06
Abstract:
A method for fabricating a semiconductor device includes the following steps. First, a semiconductor substrate is provided, and a first region, a second region and a third region are defined thereon. Then, a first well having a first conductive type is formed in the semiconductor substrate of the first region and the second region, respectively. A semiconductor layer partially overlapping the first well of the second region is formed. Furthermore, a second well having a second conductive type is formed in the semiconductor substrate of the third region and the first well of the second region respectively, where the second well of the second region is disposed underneath the semiconductor layer.
Public/Granted literature
- US20140206174A1 METHOD OF MAKING SEMICONDUCTOR DEVICE Public/Granted day:2014-07-24
Information query
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