Invention Grant
- Patent Title: Light emitting element and light emitting device
- Patent Title (中): 发光元件和发光元件
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Application No.: US13731442Application Date: 2012-12-31
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Publication No.: US08922116B2Publication Date: 2014-12-30
- Inventor: Daisuke Kumaki , Hisao Ikeda , Hiroko Abe , Satoshi Seo
- Applicant: Semiconductor Energy Laboratory, Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2004-152491 20040521
- Main IPC: H01L51/50
- IPC: H01L51/50 ; H01L51/52 ; H01L27/32

Abstract:
A light emitting element of the invention includes n pieces of light emitting layers (n is a natural number) between first and second electrodes. A first layer and a second layer are provided between the mth light emitting layer (m is a natural number of 1≦m≦n) and the m+1th light emitting layer. The first and second layers are contacted to each other. The first layer contains a substance that transports holes easily and a substance with an electron accepting property. The second layer contains a substance that transports electrons easily and a substance with an electron donating property. Molybdenum oxide is used as the substance with the electron accepting property.
Public/Granted literature
- US20130214256A1 Light Emitting Element and Light Emitting Device Public/Granted day:2013-08-22
Information query
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