发明授权
- 专利标题： Method of manufacturing laterally coupled BAW thin films
- 专利标题（中）： 制造横向耦合的BAW薄膜的方法
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申请号： US13272390申请日： 2011-10-13
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公开(公告)号： US08925163B2公开(公告)日： 2015-01-06
- 发明人: Johanna Meltaus , Tuomas Pensala , Markku Ylilammi , Tommi Riekkinen , Tomi Mattila
- 申请人： Johanna Meltaus , Tuomas Pensala , Markku Ylilammi , Tommi Riekkinen , Tomi Mattila
- 申请人地址： FI
- 专利权人： Teknologian Tutkimuskeskus VTT
- 当前专利权人： Teknologian Tutkimuskeskus VTT
- 当前专利权人地址： FI
- 代理机构： Thorpe North & Western LLP
- 优先权： FI20060832 20060918
- 主分类号： H04R17/00
- IPC分类号： H04R17/00 ; H03H9/02 ; H03H3/02 ; H03H9/56 ; H03H9/00
摘要：
The invention describes a manufacturing method for an acoustic balanced-unbalanced (balun) or balanced-balanced thin-film BAW filter based on lateral acoustic coupling. In laterally acoustically coupled thin-film BAW filters (LBAW) one can realize transformation from unbalanced to balanced electric signal if the electrodes of the balanced port are placed on the opposite sides of the piezoelectric film. The manufacturing process is simpler than in the corresponding component based on vertical acoustical coupling. The device can also realize impedance transformation.
公开/授权文献
- US20120086523A1 Method of manufacturing laterally coupled BAW thin films 公开/授权日：2012-04-12
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