Invention Grant
- Patent Title: Method of fabricating dielectric layer and shallow trench isolation
- Patent Title (中): 制造介质层和浅沟槽隔离的方法
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Application No.: US13677318Application Date: 2012-11-15
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Publication No.: US08927388B2Publication Date: 2015-01-06
- Inventor: Jei-Ming Chen , Wen-Yi Teng , Chia-Lung Chang , Chih-Chien Liu
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/762 ; H01L21/3105 ; H01L21/768 ; H01L21/02
Abstract:
A method of fabricating a dielectric layer includes the following steps. At first, a dielectric layer is formed on a substrate, and a chemical mechanical polishing (CMP) process is performed on the dielectric layer. Subsequently, a surface treatment process is performed on the dielectric layer after the chemical mechanical polishing process, and the surface treatment process includes introducing an oxygen plasma.
Public/Granted literature
- US20140134824A1 METHOD OF FABRICATING DIELECTRIC LAYER AND SHALLOW TRENCH ISOLATION Public/Granted day:2014-05-15
Information query
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