Invention Grant
- Patent Title: Graphene barrier layers for interconnects and methods for forming the same
- Patent Title (中): 用于互连的石墨烯阻挡层及其形成方法
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Application No.: US14134219Application Date: 2013-12-19
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Publication No.: US08927415B2Publication Date: 2015-01-06
- Inventor: Sandip Niyogi , Chi-l Lang
- Applicant: Intermolecular, Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/768 ; C23C14/04 ; C23C14/06 ; C23C14/18 ; C23C14/58 ; H01L21/3205 ; H01L23/532 ; H01L21/02
Abstract:
Embodiments described herein provide interconnect barrier layers and methods for forming such barriers. A dielectric body having a trench formed in a surface thereof is provided. A first layer is formed above the dielectric body within the trench. The first layer includes amorphous carbon. A second layer is formed above the first layer. The second layer includes a metal. The dielectric body, the first layer, and the second layer are heated to convert at least some of the amorphous carbon to graphene.
Public/Granted literature
- US20140106561A1 Graphene Barrier Layers for Interconnects and Methods for Forming the Same Public/Granted day:2014-04-17
Information query
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