Invention Grant
- Patent Title: Low emissivity glass comprising dielectric layer and method for producing the same
- Patent Title (中): 包含电介质层的低辐射玻璃及其制造方法
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Application No.: US13394774Application Date: 2010-09-16
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Publication No.: US08932723B2Publication Date: 2015-01-13
- Inventor: Youn Ki Jun , Il Joon Bae
- Applicant: Youn Ki Jun , Il Joon Bae
- Applicant Address: KR Seoul
- Assignee: LG Hausys, Ltd.
- Current Assignee: LG Hausys, Ltd.
- Current Assignee Address: KR Seoul
- Agency: McKenna Long & Aldridge, LLP
- Priority: KR10-2009-0091327 20090925
- International Application: PCT/KR2010/006354 WO 20100916
- International Announcement: WO2011/037365 WO 20110331
- Main IPC: B32B15/04
- IPC: B32B15/04 ; B32B17/06 ; C23C14/08 ; C03C17/36

Abstract:
Provided is low emissivity glass including a low emissivity layer containing electrically conductive metal; and a composite metal oxide formed on one or both sides of the low emissivity layer and expressed by a following chemical formula 1: TiCeOx (1) wherein Ti is titanium element, Ce is cerium element, and Ox is oxide. Since the dielectric layer which serves as protecting low emissivity layer of low emissivity glass and reducing emissivity contains the composite metal oxide expressed by the above chemical formula 1, visible light transmissivity can be greatly increased with excellent low emissivity.
Public/Granted literature
- US20120171443A1 LOW EMISSIVITY GLASS COMPRISING DIELECTRIC LAYER AND METHOD FOR PRODUCING THE SAME Public/Granted day:2012-07-05
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