Invention Grant
- Patent Title: High electron mobility transistors and methods of manufacturing the same
- Patent Title (中): 高电子迁移率晶体管及其制造方法
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Application No.: US13800614Application Date: 2013-03-13
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Publication No.: US08933446B2Publication Date: 2015-01-13
- Inventor: Woo-chul Jeon
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2012-0078956 20120719
- Main IPC: H01L29/80
- IPC: H01L29/80 ; H01L29/66 ; H01L29/10 ; H01L29/778 ; H01L29/06 ; H01L29/40 ; H01L29/20 ; H01L29/423
Abstract:
A HEMT according to example embodiments may include a first semiconductor layer, a second semiconductor layer configured to induce a 2-dimensional electron gas (2DEG) in the second semiconductor layer, an insulating mask layer on the second semiconductor layer, a depletion forming layer on one of a portion of the first semiconductor layer and a portion of the second semiconductor layer that is exposed by an opening defined by the insulating mask layer, a gate on the depletion forming layer, and a source and a drain on at least one of the first semiconductor layer and the second semiconductor layer. The source and drain may be spaced apart from the gate. The depleting forming layer may be configured to form a depletion region in the 2DEG.
Public/Granted literature
- US20140021480A1 HIGH ELECTRON MOBILITY TRANSISTORS AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2014-01-23
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