发明授权
- 专利标题: Semiconductor element, semiconductor device, and power converter
- 专利标题(中): 半导体元件,半导体器件和功率转换器
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申请号: US13780876申请日: 2013-02-28
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公开(公告)号: US08933463B2公开(公告)日: 2015-01-13
- 发明人: Kazuhiro Adachi , Osamu Kusumoto , Masao Uchida , Koichi Hashimoto , Shun Kazama
- 申请人: Kazuhiro Adachi , Osamu Kusumoto , Masao Uchida , Koichi Hashimoto , Shun Kazama
- 申请人地址: JP Osaka
- 专利权人: Panasonic Intellectual Property Management Co., Ltd.
- 当前专利权人: Panasonic Intellectual Property Management Co., Ltd.
- 当前专利权人地址: JP Osaka
- 代理机构: Renner, Otto, Boisselle & Sklar, LLP
- 优先权: WOPCT/JP2009/001960 20090430
- 主分类号: H01L29/16
- IPC分类号: H01L29/16 ; H01L29/66 ; H01L29/78 ; H03K17/14 ; H01L29/45
摘要:
A semiconductor element including an MISFET exhibits diode characteristics in a reverse direction through an epitaxial channel layer. The semiconductor element includes: a silicon carbide semiconductor substrate of a first conductivity type, semiconductor layer of the first conductivity type, body region of a second conductivity type, source region of the first conductivity type, epitaxial channel layer in contact with the body region, source electrode, gate insulating film, gate electrode and drain electrode. If the voltage applied to the gate electrode is smaller than a threshold voltage, the semiconductor element functions as a diode wherein current flows from the source electrode to the drain electrode through the epitaxial channel layer. The absolute value of the turn-on voltage of this diode is smaller than the turn-on voltage of a body diode that is formed of the body region and the first silicon carbide semiconductor layer.