Invention Grant
US08933561B2 Semiconductor device for semiconductor package having through silicon vias of different heights
有权
具有通过不同高度的硅通孔的半导体封装的半导体器件
- Patent Title: Semiconductor device for semiconductor package having through silicon vias of different heights
- Patent Title (中): 具有通过不同高度的硅通孔的半导体封装的半导体器件
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Application No.: US13211574Application Date: 2011-08-17
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Publication No.: US08933561B2Publication Date: 2015-01-13
- Inventor: SeYoung Jeong , Hogeon Song , Chungsun Lee , Ho-Jin Lee
- Applicant: SeYoung Jeong , Hogeon Song , Chungsun Lee , Ho-Jin Lee
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2010-0100467 20101014
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/768 ; H01L23/00 ; H01L25/065 ; H01L25/18 ; H01L25/00 ; H01L21/56 ; H01L23/31
Abstract:
Provided is a semiconductor device. The semiconductor device may include a first semiconductor chip that includes a first through silicon via having a first protrusion height and a second through silicon via having a second protrusion height greater than the first protrusion height which are penetrating at least a portion of the first semiconductor chip, a second semiconductor chip may be electrically connected to the first through silicon via, and a third semiconductor chip may be electrically connected to the second through silicon via.
Public/Granted literature
- US20120091580A1 Semiconductor Devices And Methods Of Fabricating The Same Public/Granted day:2012-04-19
Information query
IPC分类:
