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Invention Grant
US08934317B2 Semiconductor memory devices having internal clock signals and memory systems including such memory devices 有权
具有内部时钟信号的半导体存储器件和包括这种存储器件的存储器系统

Semiconductor memory devices having internal clock signals and memory systems including such memory devices
Abstract:
A semiconductor memory device has a clock input buffer that is turned ‘on’ or ‘off’ in response to a first control signal. The clock input buffer is configured to buffer an external clock signal in order to output a buffered clock signal. The memory device further includes an internal clock generator that is configured to generate an internal clock signal in response to the buffered clock signal. The generation of the internal clock signal is started in response to a second control signal.
Abstract(Chinese):

半导体存储器件具有响应于第一控制信号而被打开或关闭的时钟输入缓冲器。 时钟输入缓冲器被配置为缓冲外部时钟信号，以输出缓冲的时钟信号。 存储器件还包括内部时钟发生器，其被配置为响应于缓冲的时钟信号产生内部时钟信号。 响应于第二控制信号启动内部时钟信号的产生。

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