Invention Grant
- Patent Title: Methods of forming finfet devices with a shared gate structure
- Patent Title (中): 用共享栅极结构形成finfet器件的方法
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Application No.: US13797117Application Date: 2013-03-12
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Publication No.: US08936986B2Publication Date: 2015-01-20
- Inventor: Andy C. Wei , Dae Geun Yang
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/40
Abstract:
In one example, the method disclosed herein includes forming a shared sacrificial gate structure above at least one first fin for a first type of FinFET device and at least one second fin for a second type of FinFET device, wherein the second type is opposite to the first type, and forming a first sidewall spacer around an entire perimeter of the sacrificial gate structure in a single process operation.
Public/Granted literature
- US20140273429A1 METHODS OF FORMING FINFET DEVICES WITH A SHARED GATE STRUCTURE Public/Granted day:2014-09-18
Information query
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