发明授权
- 专利标题: Detection method for semiconductor integrated circuit device, and semiconductor integrated circuit device
- 专利标题(中): 半导体集成电路器件的检测方法以及半导体集成电路器件
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申请号: US13703945申请日: 2011-06-13
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公开(公告)号: US08937310B2公开(公告)日: 2015-01-20
- 发明人: Tomonori Nakamura
- 申请人: Tomonori Nakamura
- 申请人地址: JP Hamamatsu-shi, Shizuoka
- 专利权人: Hamamatsu Photonics K.K.
- 当前专利权人: Hamamatsu Photonics K.K.
- 当前专利权人地址: JP Hamamatsu-shi, Shizuoka
- 代理机构: Drinker Reath & Reath LLP
- 优先权: JP2010-138618 20100617
- 国际申请: PCT/JP2011/063520 WO 20110613
- 国际公布: WO2011/158797 WO 20111222
- 主分类号: H01L23/58
- IPC分类号: H01L23/58 ; H01L21/66 ; H01L23/48 ; H01L25/065 ; H01L25/00 ; H01L27/08
摘要:
Integrated circuit layers to be stacked on top of each other are formed with a plurality of inspection rectifier device units, respectively. The inspection rectifier device units including rectifier devices are connected between a plurality of connection terminals and a positive power supply lead and a grounding lead and emit light in response to a current. After electrically connecting the plurality of connection terminals to each other, a bias voltage is applied between the positive power supply lead and the grounding lead, and the connection state between the connection terminals is inspected according to a light emission of the inspection rectifier device unit. This makes it possible to inspect, in a short time every time a layer is stacked, whether or not an interlayer connection failure exists in a semiconductor integrated circuit device constructed by stacking a plurality of integrated circuit layers in their thickness direction.
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