- 专利标题: Striped on-chip inductor
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申请号: US13469464申请日: 2012-05-11
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公开(公告)号: US08937355B2公开(公告)日: 2015-01-20
- 发明人: Choongyeun Cho , Daeik Kim , Jonghae Kim , Moon J. Kim , Jean-Olivier Plouchart , Robert E. Trzcinski
- 申请人: Choongyeun Cho , Daeik Kim , Jonghae Kim , Moon J. Kim , Jean-Olivier Plouchart , Robert E. Trzcinski
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Driggs, Hogg, Daugherty & Del Zoppo Co., LPA
- 代理商 Patrick J. Daugherty
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L49/02 ; H01L23/522 ; H01L27/02 ; H01F17/00
摘要:
Sub-100 nanometer semiconductor devices and methods and program products for manufacturing devices are provided, in particular inductors comprising a plurality of spaced parallel metal lines disposed on a dielectric surface and each having width, heights, spacing and cross-sectional areas determined as a function of Design Rule Check rules. For one planarization process rule a metal density ratio of 80% metal to 20% dielectric surface is determined and produced. In one example a sum of metal line spacing gaps is less than a sum of metal line interior sidewall heights. In one aspect at least one of line height, width and line spacing dimensions is selected to optimize one or more chip yield, chip performance, chip manufacturability and inductor Q factor parameters.
公开/授权文献
- US20120223411A1 STRIPED ON-CHIP INDUCTOR 公开/授权日:2012-09-06