发明授权
- 专利标题： Selective epitaxial overgrowth comprising air gaps
- 专利标题（中）： 包括气隙的选择性外延过度生长
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申请号： US13457031申请日： 2012-04-26
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公开(公告)号： US08937366B1公开(公告)日： 2015-01-20
- 发明人: Sang M. Han , Darin Leonhardt , Swapnadip Ghosh
- 申请人： Sang M. Han , Darin Leonhardt , Swapnadip Ghosh
- 申请人地址： US NM Albuquerque
- 专利权人： STC.UNM
- 当前专利权人： STC.UNM
- 当前专利权人地址： US NM Albuquerque
- 代理机构： MH2 Technology Law Group, LLP
- 主分类号： H01L21/764
- IPC分类号： H01L21/764 ; H01L21/20 ; H01L29/49 ; H01L21/02 ; H01L21/203 ; H01L21/762 ; H01L29/06
摘要：
An embodiment of the present disclosure is directed to a semiconductor device. The semiconductor devise comprises a substrate. An epitaxially grown semiconductor material is disposed over at least a portion of the substrate. A nanotemplate structure is disposed at least partially within the semiconductor material. The nanotemplate structure comprises a plurality of dielectric nanoscale features defining a plurality of nanoscale windows. An air gap is disposed between at least a portion of one or more of the nanoscale features and the semiconductor material.
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