发明授权
- 专利标题： Method of forming isolation structure
- 专利标题（中）： 形成隔离结构的方法
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申请号： US13607798申请日： 2012-09-09
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公开(公告)号： US08940615B2公开(公告)日： 2015-01-27
- 发明人: Te-Lin Sun , Chien-Liang Lin , Yu-Ren Wang
- 申请人： Te-Lin Sun , Chien-Liang Lin , Yu-Ren Wang
- 申请人地址： TW Science-Based Industrial Park, Hsin-Chu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Science-Based Industrial Park, Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/31
摘要：
The present invention provides a method of forming an isolation structure. A substrate is provided, and a trench is formed in the substrate. Next, a semiconductor layer is formed on a surface of the trench. A nitridation is carried out to form a nitridation layer in the semiconductor layer. Lastly, an insulation layer is filled into the trench.
公开/授权文献
- US20140073111A1 Method of Forming Isolation Structure 公开/授权日：2014-03-13
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