发明授权
US08940637B2 Method for forming through silicon via with wafer backside protection
有权
通过硅晶片背面保护形成硅通孔的方法
- 专利标题: Method for forming through silicon via with wafer backside protection
- 专利标题(中): 通过硅晶片背面保护形成硅通孔的方法
-
申请号: US13542256申请日: 2012-07-05
-
公开(公告)号: US08940637B2公开(公告)日: 2015-01-27
- 发明人: Lup San Leong , Zheng Zou , Alex Kai Hung See , Hai Cong , Xuesong Rao , Yun Ling Tan , Huang Liu
- 申请人: Lup San Leong , Zheng Zou , Alex Kai Hung See , Hai Cong , Xuesong Rao , Yun Ling Tan , Huang Liu
- 申请人地址: SG Singapore
- 专利权人: Globalfoundries Singapore Pte. Ltd.
- 当前专利权人: Globalfoundries Singapore Pte. Ltd.
- 当前专利权人地址: SG Singapore
- 代理机构: Ditthavong & Steiner, P.C.
- 主分类号: H01L21/44
- IPC分类号: H01L21/44 ; H01L21/768 ; H01L21/48
摘要:
Semiconductor devices with through silicon vias (TSVs) are formed without copper contamination. Embodiments include exposing a passivation layer surrounding a bottom portion of a TSV in a silicon substrate, forming a silicon composite layer over the exposed passivation layer and over a bottom surface of the silicon substrate, forming a hardmask layer over the silicon composite layer and over the bottom surface of the silicon substrate, removing a section of the silicon composite layer around the bottom portion of the TSV using the hardmask layer as a mask, re-exposing the passivation layer, and removing the hardmask layer and the re-exposed passivation layer to expose a contact for the bottom portion of the TSV.