发明授权
- 专利标题： Zinc oxide based compound semiconductor light emitting device
- 专利标题（中）： 氧化锌类化合物半导体发光元件
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申请号： US11886918申请日： 2006-03-23
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公开(公告)号： US08941105B2公开(公告)日： 2015-01-27
- 发明人: Ken Nakahara
- 申请人： Ken Nakahara
- 申请人地址： JP Kyoto-shi
- 专利权人： Rohm Co., Ltd.
- 当前专利权人： Rohm Co., Ltd.
- 当前专利权人地址： JP Kyoto-shi
- 代理机构： Rabin & Berdo, P.C.
- 优先权： JP2005-086978 20050324
- 国际申请： PCT/JP2006/305805 WO 20060323
- 国际公布： WO2006/101158 WO 20060928
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01S5/327 ; H01L33/28 ; H01L21/02 ; H01L33/16 ; H01S5/042 ; H01S5/22 ; H01S5/223
摘要：
There is provided a semiconductor light emitting device in which light emitting efficiency is totally improved in case of emitting a light having a short wavelength of 400 nm or less by raising internal quantum efficiency by enhancing crystallinity of semiconductor layers laminated and by raising external quantum efficiency by taking out the light emitted by preventing the light emitted from being absorbed in the substrate or the like, as much as possible. In case of laminating ZnO compound semiconductor layers (2 to 6) so as to form a light emitting layer forming portion (7) for emitting the light having a wavelength of 400 nm or less on a substrate (1), a substrate composed of MgxZn1-xO (0≦x≦0.5) is used as the substrate (1).
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