Invention Grant
US08941962B2 Snubber circuit and method of using bipolar junction transistor in snubber circuit
有权
缓冲电路和在缓冲电路中使用双极结型晶体管的方法
- Patent Title: Snubber circuit and method of using bipolar junction transistor in snubber circuit
- Patent Title (中): 缓冲电路和在缓冲电路中使用双极结型晶体管的方法
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Application No.: US13610884Application Date: 2012-09-12
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Publication No.: US08941962B2Publication Date: 2015-01-27
- Inventor: Kuo-Fan Lin
- Applicant: Kuo-Fan Lin
- Applicant Address: TW Taoyuan, Taoyuan County
- Assignee: FSP Technology Inc.
- Current Assignee: FSP Technology Inc.
- Current Assignee Address: TW Taoyuan, Taoyuan County
- Agent Winston Hsu; Scott Margo
- Priority: TW101103040A 20120131
- Main IPC: H02H3/20
- IPC: H02H3/20 ; H02H9/04 ; H01L23/495 ; H01L23/498 ; H01L21/56 ; H01L23/62 ; H01L25/16 ; H01L23/00 ; H01L23/31
Abstract:
A snubber circuit includes: at least one impedance component, a capacitor, and a Bipolar Junction Transistor (BJT). The snubber circuit is utilized for protecting electric/electronic components, reducing high frequency interference and spike voltage, and enhancing efficiency. In particular, the at least one impedance component in the snubber circuit can be at least one zener diode, where regarding protecting electric/electronic components, reducing high frequency interference and spike voltage, and enhancing efficiency, the performance of the snubber circuit in a situation where the zener diode is utilized is better than that of the snubber circuit in a situation where other types of impedance components are utilized. An associated method of using a BJT in a snubber circuit is also provided.
Public/Granted literature
- US20130063852A1 SNUBBER CIRCUIT AND METHOD OF USING BIPOLAR JUNCTION TRANSISTOR IN SNUBBER CIRCUIT Public/Granted day:2013-03-14
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