Invention Grant
- Patent Title: Harmonic resist model for use in a lithographic apparatus and a device manufacturing method
- Patent Title (中): 用于光刻设备的谐波抗蚀剂模型和器件制造方法
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Application No.: US14224534Application Date: 2014-03-25
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Publication No.: US08942463B2Publication Date: 2015-01-27
- Inventor: Yu Cao , Luoqi Chen , Antoine Jean Bruguier , Wenjin Shao
- Applicant: ASML Netherlands B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: G06K9/62
- IPC: G06K9/62 ; G06T3/00 ; G03F7/20 ; G06T7/00
Abstract:
A method for determining an image of a mask pattern in a resist coated on a substrate, the method including determining an aerial image of the mask pattern at substrate level; and convolving the aerial image with at least two orthogonal convolution kernels to determine a resist image that is representative of the mask pattern in the resist.
Public/Granted literature
- US20140198972A1 HARMONIC RESIST MODEL FOR USE IN A LITHOGRAPHIC APPARATUS AND A DEVICE MANUFACTURING METHOD Public/Granted day:2014-07-17
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